دیتاشیت MJ11033G
مشخصات دیتاشیت
| نام دیتاشیت | MJ11028,29,30,32,33 |
|---|---|
| حجم فایل | 118.905 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 4 |
دانلود دیتاشیت MJ11028,29,30,32,33 |
MJ11028,29,30,32,33 Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet: onsemi MJ11033G
- Transistor Type: PNP
- Operating Temperature: -55°C~+200°C@(Tj)
- Collector Current (Ic): 50A
- Power Dissipation (Pd): 300W
- DC current gain (hFE@Vce,Ic): 1000@25A,5V
- Collector-emitter voltage (Vceo): 120V
- Collector cut-off current (Icbo@Vcb): 2mA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 3.5V@500mA,50A
- Package: TO-204
- Manufacturer: onsemi
- Series: -
- Packaging: Tray
- Part Status: Active
- Current - Collector (Ic) (Max): 50A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
- Current - Collector Cutoff (Max): 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
- Power - Max: 300W
- Frequency - Transition: -
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-3
- Base Part Number: MJ110
- detail: Bipolar (BJT) Transistor PNP - Darlington 120V 50A 300W Through Hole TO-3
